Sematech's Mask Blank Development Center reports that it has demonstrated EUV blanks with just 0.04 defects per square centimeter, surpassing the organization's 2007 roadmap target. The announcement particularly noted contributions from Lasertec Corporation, which provided the necessary nanometer-scale inspections.
EUV-watchers may also want to make note of two upcoming events: the EUVL Mask Standards Workshop, to be held February 25 in conjunction with the SPIE Lithography Conference; and the 2008 Sematech Litho Forum, planned for mid-May in upstate New York.
Wednesday, February 13, 2008
One low-defect step for Sematech
Posted by Katherine Derbyshire at 11:03 AM
Labels: EUV, lithography, semiconductors
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