As junctions get smaller and shallower, the exact location of dopant atoms becomes critically important. Researchers at Imago Scientific Instruments say they have used atom probe tomography to map the locations of individual dopants, showing, for instance, that arsenic atoms tend to cluster around silicon defects.
Tuesday, September 18, 2007
Where was that junction again?
Posted by Katherine Derbyshire at 10:42 AM
Labels: implant, microscopy, semiconductors
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